In a reverse-biased PN junction diode, what happens to the holes and electrons at the junction?

In a reverse-biased PN junction diode, the application of a reverse voltage causes the electric field at the junction to increase. This electric field creates a force that acts on the charge carriers present in the diode. Specifically, holes, which are positively charged carriers in the P-type material, are repelled away from the junction towards the source (or battery), while electrons, which are negatively charged carriers in the N-type material, are also repelled away from the junction in the direction of the source.

This movement effectively increases the width of the depletion region at the junction, as the carriers are drawn away from it. As a result, the diode becomes less conductive, and this configuration limits the flow of current through the device. Thus, the correct understanding of what occurs in the reverse-biased condition is that both holes and electrons are attracted away from the junction due to the enhanced electric field created by the applied reverse voltage.